Applied Physics Letters · 2007 · 40 citations · 12 references
Natural SciencesElectrical EngineeringPhysicsCondensed Matter PhysicsQuantum ComputingQuantum MechanicsNanoelectronicsQuantum ControlQuantum DotsQuantum TunnelingSemiconductor NanomaterialsSemiconductor PhysicsCapacitanceCharge State DistributionsCharge-state DistributionHeterostructure DevicesMulti-qubit GatesResonant TunnelingSemiconductor Quantum DotsTwo-qubit Gates
The authors investigate electrostatic coupling between two double quantum dots (DQDs) defined in an AlGaAs∕GaAs heterostructure by measuring the correlation between resonant tunneling currents through the DQDs. Resonant tunneling in one DQD can be controlled by the charge state of the other DQD. This controlled resonant tunneling is consistent with the capacitance model for the geometry and can be used to investigate the statistics of single-electron charge states in the DQD. The observed electrostatic coupling is strong enough to perform two-qubit quantum gates both for charge- and electron-spin-based qubit schemes.
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