One-Dimensional Localization and Interaction Effects in Narrow (0.1-μm) Silicon Inversion Layers

Abstract

The conductance of narrow (0.1-\ensuremath{\mu}m) silicon inversion layers has been measured at low temperatures. A divergent, nonmetallic decrease of conductance is observed below 30 K, in excellent quantitative agreement with the combined theories of weak localization and interaction effects in their one-dimensional form, if one assumes parameters comparable to those observed in wide (two-dimensional) inversion layers. In this novel experimental system both localization and interaction effects are present and comparable in size.