Channel‐Length‐Dependent Field‐Effect Mobility and Carrier Concentration of Reduced Graphene Oxide Thin‐Film Transistors

Abstract

Reduced graphene oxide thin-film transistors exhibit unique channel-length-dependent field-effect mobilities and carrier concentrations due to their structural and electronic properties. Increase in these characteristics with decreasing channel length is a consequence of the hopping transport from nanosheet to nanosheet and pinning of the Fermi energy at source and drain electrodes.