Cracking of Saturated Hydrocarbon Gas Molecular Beam for Carbonization of Si(001) Surface

Abstract

Carbonization of Si(001) surfaces by saturated hydrocarbon gas molecular beams in a high vacuum was carried out employing a thermal cracking technique. In the case of C 3 H 8 and C 2 H 6 , the Si surfaces were carbonized at 750°C with a cracking temperature of 1300°C, and 3C-SiC layers were obtained. Decomposition of C 3 H 8 by cracking was observed in quadrupole mass analyzer (QMA) measurements. In the case of C 2 H 6 , the effect of cracking was less obvious, and decomposed species were not observed except for H 2 in QMA measurements. In the case of CH 4 , no effect of cracking was observed. This result seems to be related to the difference in the bond strengths of molecules.