Publication | Closed Access
Ti<sub>5</sub>Si<sub>3</sub> Nanowire and Its Field Emission Property
54
Citations
29
References
2008
Year
EngineeringThin Film Process TechnologySemiconductor NanostructuresSemiconductorsNanoscale ScienceTi5si3 NanowiresThin Film ProcessingElectrical EngineeringNanoscale SystemPhysicsNanotechnologyOxide ElectronicsField Emission PropertyElectronic MaterialsNanomaterialsApplied PhysicsC54-tisi2 Thin FilmsNanofabricationThin FilmsSeveral MicrometersChemical Vapor DepositionNanostructures
Ti5Si3 nanowires (diameter, 20–50 nm; length, several micrometers) on C54-TiSi2 thin films are prepared through a unique chemical vapor deposition process. They show excellent field emission properties, a low turn-on field E0 of 5.4 V/µm, and a high field enhancement factor β of 816.
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