On the prospect of as-grown semi-insulating InP: ODMR of the P_Inantisite

Abstract

ODMR investigations of e-irradiated InP:Zn show that the PIn antisite resonance is associated with emission at 0.89 eV. The authors assign this recombination process to the capture of the second electron at the PIn4+ centre. In analogy with GaAs where the EL2 centre pins the Fermi level at mid-gap, they propose that the PIn3+ (D10) level at (Ec-0.89 eV) should allow as grown semi-insulating InP to be prepared by off-stoichiometric growth.