Below bulk-band-gap photoluminescence at room temperature from heavily P- and B-doped Si nanocrystals

Abstract

Photoluminescence (PL) properties of heavily P- and B-doped Si nanocrystals (nc-Si) are studied. By simultaneously doping two types of impurities, nc-Si exhibit strong PL at around 0.9 eV at room temperature. The temperature quenching of the PL is very small. Although the PL peak energy is very close to that of dangling-bond related PL previously observed, all of the observed properties, i.e., decay dynamics, degree of temperature quenching, etc., are apparently different. The transition between donor and acceptor states in nc-Si is the possible origin of the low-energy PL.