A measurement of the electron–hole pair creation energy and the Fano factor in silicon for 5.9 keV X-rays and their temperature dependence in the range 80–270 K

Temperature and pressure dependences of the dielectric constants of semiconductors

G. A. Samara · Physical review. B, Condensed matter · 1983 · 554 citations

Natural Sciences, Materials Science, Physics +17

Carrier dynamics of electrons and holes in moderately doped silicon

Martin van Exter, D. Grischkowsky · Physical review. B, Condensed matter · 1990 · 295 citations · Full text

Engineering, Electrical Engineering, Physics +17

Accurate determination of the ionization energy in semiconductor detectors

R.H. Pehl, F.S. Goulding, D.A. Landis et al. · Nuclear Instruments and Methods · 1968 · 189 citations

Engineering, Electrical Engineering, Radiation Detection +15

The X-ray energy response of silicon Part A. Theory

G.W. Fraser, A. F. Abbey, A. D. Holland et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1994 · 154 citations

Natural Sciences, Materials Science, Physics +12

Determination of the electron–hole pair creation energy for semiconductors from the spectral responsivity of photodiodes

Frank Scholze, H. Henneken, Peter Kuschnerus et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2000 · 94 citations

Engineering, Electrical Engineering, Materials Science +12