Publication | Open Access
Terrace-width distributions on vicinal Si(111)
166
Citations
15
References
1990
Year
Energetic RepulsionEngineeringTunneling MicroscopyPhysicsApplied PhysicsCondensed Matter PhysicsSilicenePhysical ChemistrySemiconductor Device FabricationSilicon On InsulatorVicinal SiStep SeparationSurface Reconstruction
Using scanning tunneling microscopy, we have quantitatively characterized the configurations of steps on vicinal Si(111) surfaces misoriented by 1.2\ifmmode^\circ\else\textdegree\fi{} and 2.3\ifmmode^\circ\else\textdegree\fi{} towards the [1\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{} 2] direction. The measured terrace-width distributions are strongly peaked, consistent with predictions for thermally wandering steps. However, the distributions are much narrower than predicted for the simple terrace-step-kink model, indicating that the steps interact with energetic short-range repulsions. The magnitude of this energetic repulsion is gauged from a Gaussian fit to the data. The width of the distribution scales with step density as expected for repulsions which decay as the inverse square of step separation.
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