Development of n-on-p silicon sensors for very high radiation environments

First results on charge collection efficiency of heavily irradiated microstrip sensors fabricated on oxygenated p-type silicon

G. Casse, P. P. Allport, M. Lozano et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2003 · 40 citations

Engineering, Electrical Engineering, Microelectronics +10

Testing of bulk radiation damage of n-in-p silicon sensors for very high radiation environments

K. Hara, A. A. Affolder, P. P. Allport et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2010 · 38 citations

Engineering, Materials Engineering, Materials Science +16

Proton irradiation on p-bulk silicon strip detectors using 12 GeV PS at KEK

S. Terada, T. Kohriki, T. Kondo et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 1996 · 35 citations · Full text

Engineering, Nuclear Engineering, Physics +16

Testing of surface properties pre-rad and post-rad of n-in-p silicon sensors for very high radiation environment

S. Lindgren, A. A. Affolder, P. P. Allport et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2010 · 33 citations

Natural Sciences, Materials Engineering, Materials Science +16

Optimization of surface structures in n-in-p silicon sensors using TCAD simulation

Y. Unno, Y. Ikegami, T. Kohriki et al. · Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment · 2010 · 17 citations

Engineering, Electrical Engineering, Materials Science +13