physica status solidi (b) · 2010 · 23 citations · 24 references
Natural SciencesMaterials SciencePhysicsMaterials PhysicsNanomaterialsNanotechnologyNanomaterial CharacterizationNanowiresRaman SpectroscopySemiconductor NanomaterialsSemiconductor PhysicsSilicon MaterialsAnharmonic Effects In SolidsRaman ScatteringSemiconductor NanowiresSilicon NanostructuresSilicon NanowiresSilicon PhysicsTemperature DependenceTemperature-dependent Raman Spectroscopy
Abstract The first‐ and second‐order Raman scattering of the silicon nanowires grown without any metal catalyst is studied in the temperature range from 77 to 873 K. The first‐ and second‐order Raman peaks were found to shift and broaden differently with increasing temperature. We show that this is due to the confinement related enhanced anharmonic effects in silicon nanowires. Our measurements also show that both the second‐ to first‐order Raman peak intensity ratio [ I (2TA) int. / I (1TO) int. and I (2TO) int. / I (1TO) int. ] and the Raman relative intensities [ I (2TA) int. / I (2TO) int. ] increase with increasing temperature. magnified image TEM image of SiNWs. The SiNW are 15 nm in diameter and up to a few microns long.
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Small-Diameter Silicon Nanowire Surfaces
D. D. D., Chun‐Sing Lee, Frederick Au et al. · Science · 2003 · 1.2K citations
Natural Sciences, Materials Engineering, Materials Science +16
Multiphonon Raman Spectrum of Silicon
P. A. Temple, C. E. Hathaway · Physical review. B, Solid state · 1973 · 682 citations