Japanese Journal of Applied Physics · 1981 · 43 citations · 14 references
Natural SciencesMaterials EngineeringMaterials ScienceOptoelectronicsSemiconductor MaterialsThin FilmsEpitaxial GrowthOptical Properties Of SemiconductorsOptical Thin FilmsSemiconductor Device MaterialsThin Film Optical PropertiesThin-film MaterialsCritical ThicknessDoping In Thin FilmsExcitonic EffectsFilm ThicknessLow-temperature GrowthMolecular Beam EpitaxyPhotoluminescencePhotoluminescence Spectroscopy
The photoluminescence properties of molecular beam epitaxially (MBE) grown ZnSe films have been studied. It was found that the critical film thickness above which the photoluminescence spectra show similar features is 0.8 µm. The photoluminescence spectra of MBE ZnSe at room temperature show dominant band-to-band emission and much weaker self-activated emission. No edge emission was observed at low temperature. The intensity of the I1 lines due to bound excitons at neutral acceptors is very weak. It is concluded that MBE ZnSe is of high-purity and contains lower concentration of the Zn-vacancy.
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Optical Properties of Substitutional Donors in ZnSe
J. L. Merz, Hiroshi Kukimoto, K. Nassau et al. · Physical review. B, Solid state · 1972 · 301 citations
Pair Spectra and the Shallow Acceptors in ZnSe
J. L. Merz, K. Nassau, J.W. Shiever · Physical review. B, Solid state · 1973 · 211 citations