Photoluminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy

Abstract

The photoluminescence properties of molecular beam epitaxially (MBE) grown ZnSe films have been studied. It was found that the critical film thickness above which the photoluminescence spectra show similar features is 0.8 µm. The photoluminescence spectra of MBE ZnSe at room temperature show dominant band-to-band emission and much weaker self-activated emission. No edge emission was observed at low temperature. The intensity of the I1 lines due to bound excitons at neutral acceptors is very weak. It is concluded that MBE ZnSe is of high-purity and contains lower concentration of the Zn-vacancy.