Semiconductor core-shell quantum dot: A low temperature nano-sensor material

Abstract

This paper presents an analytical study of temperature dependent photoluminescence (PL) in core-shell quantum dots (CSQDs) made of most frequently used II-VI semiconducting materials. The analysis incorporates the temperature dependent radiative recombination processes in the calculation of the integrated PL intensity. The PL intensity has been derived using semiclassical density matrix formalism for the CSQDs exhibiting excitonic and biexcitonic features. The numerical estimates show that the PL intensity response and PL peak shifts are non-trivial at low temperature in such CSQDs and can be useful in the design of a temperature sensor.