Large-area mosaic diamond films approaching single-crystal quality

Abstract

The seeding for large-area mosaic diamond films approaching single-crystal quality is described. The technique includes patterned etching of relief structures in Si substrates, deposition from a slurry and orientation of macroscopic diamond seed crystals in the structures, and chemical vapor deposition overgrowth of the diamond seeds to form a continuous film. The film comprises ∼100 μm single crystals, which are separated by low-angle grain boundaries of a few degrees or less. We believe that these low-angle grain boundaries will not affect the electrical properties of majority-carrier devices.