Wetting of Ceramic Oxides by Molten Metals Under Ultrahigh Vacuum

Abstract

Contact angles, surface free energies, and work of adhesion were determined by a sessile drop technique for the wetting of MgO, Al 2 O 3 , and SiO 2 by In, Ga, and Sn at 10 ‐10 torr. The surface free energies of In, Ga, and Sn were 540, 632, and 573 ergs/cm 2 (±5%), respectively, at their melting points. Works of adhesion and equilibrium contact angles for wetting of MgO by In are 172 ergs/cm 2 and 133° by Ga, 356 ergs/cm 2 and 116° by Sn, 278 ergs/cm 2 and 121°. For wetting of Al 2 O 3 by In, they are 237 ergs/cm 2 and 124° by Ga, 226 ergs/cm 2 and 130° by Sn, 257 ergs/cm 2 and 123°. For wetting of SiO 2 by In, they are 208 ergs/cm 2 and 128° by Ga, 260 ergs/cm 2 and 126° by Sn, 252 ergs/cm 2 and 124°.