Response of magnetron sputtered AlN films to controlled atmosphere annealing

Abstract

The present investigation deals with the examination of the response of amorphous AlN films to post-deposition annealing environments such as high vacuum (HV) and nitrogen atmosphere (NA). The c / a ratio values from GIXRD for both cases are around 1.602. The XPS profile of NA-AlN shows a deficiency of nitrogen on the surface, whereas the oxygen impurity level is negligible in the case of NA compared with HV. The PL spectra substantiate the nitrogen vacancies in NA-AlN. The amorphous AlN exhibits a nanoindentation hardness of 18 GPa.