Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer - Concepedia

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Molecular beam epitaxy growth and characterization of InxGa1 − xAs (0.57 ⩽ x ⩽ 1) on GaAs using InAlAs graded buffer

21

Citations

13

References

1997

Year

S.M. Wang, Christer Karlsson, Niklas Rorsman, Mats Bergh, Eva Olsson, Thomas Andersson, Herbert Zirath

Journal of Crystal Growth

Electrical EngineeringEngineeringApplied PhysicsInxga1 − XasMolecular Beam EpitaxyEpitaxial GrowthCompound Semiconductor

References

	Year	Citations

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