Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2008 · 77 citations · 20 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsPhotonicsSemiconductor DevicesIntegrated OpticsLaser DiodesOptical SourcesPhotonic Integrated CircuitsSemiconductor Device MaterialsSemiconductor LasersDiamond Semiconductor DevicesHeat DissipationHigh-power Laser DiodesHigh-power Semiconductor LasersIntegrated LasersIntegrated Semiconductor LasersLight-emitting DevicesVertical-cavity Surface-emitting Lasers
We present recent results on high-power, high-efficiency two-dimensional vertical-cavity surface-emitting laser (VCSEL) arrays emitting around 808nm. Selectively oxidized, top-emitting single VCSEL emitters with 49% power conversion efficiency were developed as the basic building block of these arrays. Because of the strong GaAs absorption at the 808nm wavelength, the traditional bottom-emitting, substrate-emission configuration is not possible for large arrays that require efficient heat dissipation. The processing and packaging challenges are discussed. We demonstrate 3mm x 3mm arrays and 5mm x 5mm arrays with the GaAs substrate completely removed and mounted on diamond submounts. These arrays emit more than 50W and 120W, respectively, and exhibit a maximum powerconversion efficiency of 42%.
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Diode Lasers and Photonic Integrated Circuits
L.A. Coldren · Optical Engineering · 1997 · 1.7K citations