Efficient p-type doping of 6H-SiC: Flash-lamp annealing after aluminum implantation

Abstract

Flash-lamp annealing was used for activation and crystal recovery of highly aluminum-implanted 6H-SiC wafers. In comparison with conventional furnace annealing, the free hole concentration can be remarkably increased at high acceptor atom concentrations (⩾5×1020 cm−3). The lowest resistivity measured at room temperature was 0.01 Ω cm. In this case, the layers are characterized by metallic conduction with weak dependence of the hole concentration on the temperature. This effect is caused by freezing-in of the enhanced solubility of aluminum in SiC at the extraordinary high temperature of about 2000 °C during the light-flash.