Physical Review Letters · 1986 · 301 citations · 13 references
Natural SciencesPhysicsCondensed Matter PhysicsOpticsQuantum MechanicsElectronic Excited StatesLaser SpectroscopyOptical Properties Of SemiconductorsScattering TheorySemiconductor PhysicsUltrafast OpticsCarrier ScatteringCollision EfficiencyExciton DynamicsExcitonsPhase CoherenceRelaxation ProcessesUltrafast Electron DynamicsUltrafast Spectroscopy
The ultrafast relaxation of excitons in GaAs, coherently excited by a short optical pulse and subjected to collisions with free carriers and noncoherent excitons which are independently created by a second synchronized light pulse, is studied directly in the time domain by a probing of the excitonic phase coherence. The relaxation rates reveal strong exciton-exciton scattering with a collision efficiency of 1.6 \ifmmode\times\else\texttimes\fi{} ${10}^{\ensuremath{-}4}$ ${\mathrm{cm}}^{3}$ ${\mathrm{s}}^{\ensuremath{-}1}$ and even 10 times more efficient exciton-free-carrier scattering.
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Neutral Impurity Scattering in Semiconductors
C. Erginsoy · Physical Review · 1950 · 688 citations
Optical properties of highly excited direct gap semiconductors
C. Klingshirn, H. Haug · Physics Reports · 1981 · 545 citations