Physical review. B, Condensed matter · 1992 · 24 citations · 27 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSemiconductor MaterialsThin FilmsSemiconductor Crystal GrowthSemiconductor PhysicsSemiconductor SurfacesSemiconductor Thin FilmsSurface CrystallographyThin Film AnnealingAnnealingAntimonide SemiconductorsDisordered SemiconductorsFilm Growth MechanismsFilm ThicknessSemiconductor CrystallographySubstrate Orientation EffectsSuperstructure Arrangement
The growth structures for Sb and Bi films on GaAs(110) have been studied for thicknesses of 0.5--50 monolayers (ML) with annealing to temperatures as high as 600 K. Antimony films exhibit layered structures with \ensuremath{\sim}6-\AA{} heights but also disordered surface features for coverages up to \ensuremath{\sim}10 ML when grown at 300 K. Annealing to 500 K produces orientationally ordered films that contain grains with striped domain walls and two differently oriented superstructures. These superstructures can be explained in terms of a Moir\'e effect in which the 〈001〉 direction of the pseudocubic Sb(110) plane is rotated by +7\ifmmode^\circ\else\textdegree\fi{} or-7\ifmmode^\circ\else\textdegree\fi{} from the substrate [11\ifmmode\bar\else\textasciimacron\fi{}0] direction. Sb undergoes a semiconductor-semimetal transition when the film thickness reaches \ensuremath{\sim}15 \AA{}. By 20-ML deposition, the ability of the substrate to dictate surface structure is lost. Films grown at 300 K are polycrystalline with randomly oriented basal planes. Annealing to 600 K creates large crystallites with basal planes parallel to the substrate surface. For Bi overlayers on GaAs(110), the first layer is epitaxial but two-dimensional islands form on the 1\ifmmode\times\else\texttimes\fi{}1 layer at 300 K. These islands are \ensuremath{\sim}7 \AA{} in height and exhibit two differently oriented superstructures. As for Sb, this superstructure reflects a Moir\'e effect. For Bi/GaAs, the 〈001〉 direction of the Bi pseudocubic (110) plane is rotated by +10\ifmmode^\circ\else\textdegree\fi{} or -10\ifmmode^\circ\else\textdegree\fi{} from the substrate [11\ifmmode\bar\else\textasciimacron\fi{}0] direction. The islands coalesce to form large, highly anisotropic crystallites having a periodic superstructure at 4-ML coverage. Bi crystallites are formed after 50-ML deposition at 300 K with elongation along the substrate [11\ifmmode\bar\else\textasciimacron\fi{}0] direction.
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