High Field Magnetoresistance and de Haas-van Alphen Effect in CeSn₃

Abstract

The magnetoresistance and the de Haas-van Alphen (dHvA) effect in CeSn 3 have been measured in the field up to 150 kOe and at temperature down to 0.45 K. The magnetoresistance does not show a tendency to saturate in all field directions. This result claims that CeSn 3 is a compensated metal with an equal carrier concentration of electrons and holes, and electron and hole Fermi surfaces possess no open orbits. In contrast to an uncompensated metal LaSn 3 , the 4 f electrons in CeSn 3 become itinerant electrons. This is consistent with the dHvA data which are almost explained by the modified Fermi surface model based on the result of band calculation where the 4 f electrons are treated the same as the usual s , p , d conduction electrons.