Applied Physics Letters · 1997 · 105 citations · 7 references
Natural SciencesMaterials SciencePhysicsCeramic MaterialsSolid State PhysicsThin FilmsElectrical ConductivityElectrical Properties Of CeramicsFerroelectric CeramicsFerroelectric MaterialsOxide SemiconductorsConductionConductivityElectrical Conductivity MeasurementsFerroelectric PropertiesHall EffectHall Effect MeasurementsHeterostructuresResistivity
We report the observation of a ferroelectric field effect in the conducting oxide SrRuO3 using Pb(Zr0.52Ti0.48)O3/SrRuO3 epitaxial heterostructures. Upon reversing the polarization of the ferroelectric Pb(Zr0.52Ti0.48)O3 layer, we measured a 9% change in the resistance of a nominally 30 Å SrRuO3 film at room temperature. This change was nonvolatile for a period of several days. Conductivity measurements taken between 4.2 and 300 K are consistent with n-type conduction throughout this temperature range. Hall effect measurements also yield n-type conduction, with n≈2×1022 electrons/cm3, and furthermore allow us to understand quantitatively the magnitude of the observed resistivity change.
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Properties of epitaxial SrRuO3 thin films
X. D. Wu, S. R. Foltyn, R. C. Dye et al. · Applied Physics Letters · 1993 · 155 citations