Publication | Open Access
Chemical vapor deposition of tungsten oxide
41
Citations
20
References
1998
Year
Materials ScienceMaterials EngineeringChemical EngineeringWo3 FilmsEngineeringTungsten OxideOxide ElectronicsSurface ScienceVolatile PrecursorsTungsten HexafluorideThin Film Process TechnologyChemistryThin FilmsChemical DepositionChemical Vapor DepositionThin Film ProcessingElectrochemistry
Crystalline and amorphous thin films of tungsten(VI) oxide can be prepared by chemical vapor deposition using a variety of volatile precursors below 500 °C. Deposition parameters for preparation of WO3 films from tungsten hexacarbonyl [W(CO)6], tungsten hexafluoride (WF6), tungsten ethoxides [W(OEt)x, x = 5, 6] and tetra(allyl)tungsten [W(η3-C3H5)4] are summarized. The electrochromic behavior of these films is comparable with that observed for WO3 films prepared by evaporation, sputtering and electrodeposition. © 1998 John Wiley & Sons, Ltd.
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