Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon - Concepedia

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Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

30

Citations

17

References

2007

Year

Nikolas Zographos, Christoph Zechner, Ibrahim Avci

MRS Proceedings

Defect ToleranceEngineeringEfficient Tcad ModelPhysicsDislocation InteractionApplied PhysicsCondensed Matter PhysicsDefect FormationSemiconductor Device FabricationDislocation LoopsMicroelectronicsInterstitial ClustersSilicon Debugging

References

	Year	Citations

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