Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon

Physical mechanisms of transient enhanced dopant diffusion in ion-implanted silicon

P.A. Stolk, H.‐J. Gossmann, D. J. Eaglesham et al. · Journal of Applied Physics · 1997 · 614 citations

Materials Science, Semiconductors, Si Implants +15

Implantation and transient B diffusion in Si: The source of the interstitials

D. J. Eaglesham, P.A. Stolk, H.-J. Gossmann et al. · Applied Physics Letters · 1994 · 536 citations

Semiconductors, Engineering, Crystalline Defects +12

Energetics of Self-Interstitial Clusters in Si

N. E. B. Cowern, Giovanni Mannino, P.A. Stolk et al. · Physical Review Letters · 1999 · 313 citations

Engineering, Silicon On Insulator, Defect Tolerance +17

Ostwald ripening of end-of-range defects in silicon

Caroline Bonafos, D. Mathiot, A. Claverie · Journal of Applied Physics · 1998 · 171 citations

Materials Science, Activation Energy, Point Defects +13

{311} defects in silicon: The source of the loops

Jinghong Li, K. S. Jones · Applied Physics Letters · 1998 · 90 citations

Materials Science, Semiconductors, Engineering +13