0.99 mW 3–10 GHz common-gate CMOS UWB LNA using T-match input network and self-body-bias technique

Abstract

A low-power 3–10 GHz common-gate CMOS ultra-wideband (UWB) low-noise amplifier (LNA) using a T-match input network and the self-body-bias technique is demonstrated. Wideband input impedance matching was achieved by using the proposed T-match input network to improve the input matching at low frequencies. A low supply voltage of 1.1 V (for two VDS drops) was achieved by using the self-body-bias technique to reduce the threshold voltage (Vth) of the transistors, which leads to a low power consumption (PD). At VG=0.77 V, the LNA consumed 2.15 mW and achieved S11 of −10.4 to −35.5 dB, S21 of 10.4 dB, and an average NF of 4.9 dB over the 3–10 GHz band of interest. At VG=0.63 V, the LNA consumed 0.99 mW and achieved S11 of −10.7 to −35.8 dB, S21 of 7.9 dB and an average NF of 6 dB. Both are the lowest PD ever reported for an UWB CMOS LNA with bandwidth greater than 6 GHz.