Performance of poly(3-hexylthiophene) organic field-effect transistors on cross-linked poly(4-vinyl phenol) dielectric layer and solvent effects

Abstract

Bottom-contact organic field-effect transistors (OFETs) were fabricated using a polymer gate insulator cross-linked poly(4-vinyl phenol) with regioregular poly(3-hexylthiophene) (RR-P3HT) as an active layer from different organic solvents. With this polymer dielectric, a field-effect mobility of 0.084±0.006cm2V−1s−1 was obtained. Solvents and interfacial properties have pronounced effects in determining the crystallinity and device performance of RR-P3HT on the polymer gate layer. Morphology correlation with the charge carrier mobility of RR-P3HT OFETs is investigated. Large nanoscale crystalline island densities of this polymer play an important role in the high charge carrier mobility of devices.