Ti-Doped VO₂ Films Grown on Glass Substrates by Excimer-Laser-Assisted Metal Organic Deposition Process

Abstract

V 1- x Ti x O 2 films were prepared on glass substrates by excimer-laser-assisted metal organic deposition (ELAMOD) and thermal MOD processes. The VO 2 phase was successfully formed in the range of x = 0–0.35 at 300 °C in air using the ELAMOD process. This is a big advantage in terms of fabrication process for glass or organic substrates. It was also confirmed that dense films were obtained by preparing TiO 2 buffer layers on glass substrates. Furthermore, the detailed effect of Ti content in VO 2 films on metal–insulator (MI) transition properties was examined. As Ti content increased, the broadening of MI transition and the decreasing of the hysteresis width occurred. At x = 0.14, the hysteresis disappeared. The temperature coefficient of electrical resistance (TCR) value of the film ( x = 0.14) remained at approximately -3%/K from 300 to 340 K and was more than -4%/K from 340 to 350 K.