Effect of bias field in a zinc-oxide-on-silicon acoustic convolver

Abstract

A monolithic acoustic surface wave parametric signal processor, fabricated with sputtered zinc oxide on an oxidized epitaxial n -on-n+ silicon substrate, is demonstrated. The dependence of the convolution output signal strength on applied gate bias is analyzed, and it is found that the maximum output occurs just before the semiconductor surface inverts, at which time the high-frequency capacitance-voltage characteristic has its maximum slope.