Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering

Abstract

ZnO thin film has been epitaxially grown on the (111) plane of the diamond substrate by rf magnetron sputtering at substrate temperature as low as 260 °C. The crystallinity was examined by x-ray diffraction and reflection high-energy electron diffraction. It was found that the smallest standard deviation angle estimated from the x-ray rocking curve of the ZnO(0002) peak was 0.27° whereas the mismatch of the lattice parameter between film and substrate is 28.8%. The epitaxial relationship between ZnO film and the diamond is determined as [112̄0] ZnO//[1̄01] diamond.