Publication | Closed Access
Lattice-Scattering Mobility in Germanium
206
Citations
5
References
1954
Year
SemiconductorsMaterials ScienceQuantum Lattice SystemEngineeringPhysicsLattice-scattering MobilityApplied PhysicsCondensed Matter PhysicsQuantum MaterialsAtomic PhysicsTemperature DependenceSemiconductor MaterialMinimum EnergyTopological HeterostructuresSolid-state PhysicGermanene
The temperature dependence of lattice-scattering mobility in germanium is determined from conductivity. It is found to be ${T}^{\ensuremath{-}1.66}$ for electrons and ${T}^{\ensuremath{-}2.33}$ for holes. The result for holes suggests that the valence band is not at the center of the Brillouin zone. The ratio Hall mobility/conductivity mobility is also determined. It is found to be constant with temperature at \ensuremath{\sim}1.05 for electrons. The ratio for holes shows significant temperature dependence. This suggests that the valence band is composed of multiple surfaces of minimum energy.
| Year | Citations | |
|---|---|---|
Page 1
Page 1