Physical Review · 1954 · 208 citations · 5 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSolid State PhysicsElectronic Band StructureElectronic Structure Of SolidsElectronic Transport ModelingSemiconductor PhysicsSemiconductor SurfacesBand TheoryBrillouin ZonesElectrical Transport PropertiesHall ConductivityTemperature DependenceTemperature Dependence Of Electrical PropertiesValence BandValence Band Structure
The temperature dependence of lattice-scattering mobility in germanium is determined from conductivity. It is found to be ${T}^{\ensuremath{-}1.66}$ for electrons and ${T}^{\ensuremath{-}2.33}$ for holes. The result for holes suggests that the valence band is not at the center of the Brillouin zone. The ratio Hall mobility/conductivity mobility is also determined. It is found to be constant with temperature at \ensuremath{\sim}1.05 for electrons. The ratio for holes shows significant temperature dependence. This suggests that the valence band is composed of multiple surfaces of minimum energy.
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Electrons and holes in semiconductors
M.D. Earle · Journal of the Franklin Institute · 1951 · 1.2K citations
Current Carrier Mobility Ratio in Semiconductors
Lloyd P. Hunter · Physical Review · 1953 · 27 citations
The Temperature Dependence of Drift Mobility in Germanium
R Lawrance · Physical Review · 1953 · 24 citations