Photoelectrochemical Properties of n‐Type In2 O 3

J.F. McCann, J. O’M. Bockris

Journal of The Electrochemical Society · 1981 · 42 citations · 0 references

Concepts

Abstract

The electrochemical and photoelectrochemical properties of single crystal n‐type were examined in and . The photocurrent‐wavelength response indicated the absorption edge is an indirect transition of about 2.3–2.5 eV. The flatband potentials were determined from Mott‐Schottky plots to be −0.72 and 0.22V (vs. SCE) in and , respectively. The photocurrent from the electrode was steady during 13 hr while illuminating the sample in at 0.3V (vs. SCE).