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Ultrafast spin tunneling and injection in coupled nanostructures of InGaAs quantum dots and quantum well
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Citations
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References
2014
Year
Materials ScienceSpintronicsQuantum ScienceCoupled NanostructuresSpin InjectionIn0.5ga0.5as Quantum DotsPhysicsEngineeringNanoelectronicsQuantum DeviceTunneling MicroscopyCondensed Matter PhysicsApplied PhysicsQuantum DotsElectron-spin Injection DynamicsIngaas Quantum DotsUltrafast Spin Tunneling
We investigate the electron-spin injection dynamics via tunneling from an In0.1Ga0.9As quantum well (QW) to In0.5Ga0.5As quantum dots (QDs) in coupled QW-QDs nanostructures. These coupled nanostructures demonstrate ultrafast (5 to 20 ps) spin injection into the QDs. The degree of spin polarization up to 45% is obtained in the QDs after the injection, essentially depending on the injection time. The spin injection and conservation are enhanced with thinner barriers due to the stronger electronic coupling between the QW and QDs.
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