First-principles prediction of a new Dirac-fermion material: silicon germanide monolayer

Abstract

From first-principles calculations, we proposed a silicon germanide (SiGe) analog of silicene. This SiGe monolayer is stable and free from imaginary frequency in the phonon spectrum. The electronic band structure near the Fermi level can be characterized by Dirac cones with the Fermi velocity comparable to that of silicene. The Ge and Si atoms in SiGe monolayer exhibit different tendencies in binding with hydrogen atoms, making sublattice-selective hydrogenation and consequently electron spin-polarization possible.