Formation and properties of In-doped high-conductivity CdSe evaporated film

Abstract

High dark-conductivity CdSe films have been prepared by coevaporation of CdSe and In, and the physical properties of the films were investigated. The dark conductivity of the films at 25 °C ranged from 0.68 to 3800 S cm−1. The conductivity type was n-type and In was found to act as the donor in CdSe films.The film structure was of hexagonal zinc sulfide type with a preferential orientation of the (002) planes parallel to the substrate. Analyzing the film structure in detail by x-ray analysis, it was found that the In atoms were doped substitutionally into the CdSe during the low-concentration doping stage and then doped interstitially during the high doping stage.