Unified theory of high-frequency noise in Schottky barriers

Abstract

A unified noise-temperature equation is presented which describes the high-frequency noise (>1/f noise) characteristic of Schottky barrier diodes from above room temperature to cryogenic temperatures. The unified noise equation takes into consideration the dominant transport mechanism of the barrier and is applicable to any metal-semiconductor system. Noise-temperature measurements on fabricated Schottky barrier diodes at 18, 77, and 300 °K confirm the validity of the noise theory presented.