Low resistivity indium tin oxide films by pulsed laser deposition

Abstract

Indium tin oxide films were grown by pulsed laser deposition on glass substrates. The electrical and optical properties of these films were studied. At optimized oxygen pressures, films with resistivity values of 1.4×10−4 and 5.6×10−4 Ω cm were deposited at substrate temperatures of 310 and 20 °C, respectively. Films with a thickness of 180 nm had a transmission of nearly 100% for the wavelength range of 600–800 nm.