Physical Review Letters · 1984 · 77 citations · 17 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsInterface ScienceSemiconductor MaterialsMetal-semiconductor ContactsSemiconductor InterfacesSemiconductor PhysicsSemiconductor SurfacesSurface PhysicsSurface ReactivityBand BendingCluster FormationCluster ReactivityMetal-semiconductor InterfacesSurface Band BendingSurface Reaction MechanismsSurface Reaction PathwaysSurface States
Synchrotron-radiation photoemission, angle-resolved Auger, and LEED studies show Ce cluster formation on Si(111). These nonmetallic clusters grow for coverages of 0.1 to 0.6 monolayer, interact weakly with the substrate, and induce 200-meV band-bending changes. At \ensuremath{\sim} 0.6 monolayer, they stimulate surface disruption, producing a metallic interfacial silicide. The association of $d$- or $f$-band metal clusters with surface reaction substantially extends the cluster-induced-reaction model proposed for Al-GaAs.
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