Low-temperature, chemically driven atomic-layer epitaxy: <i>In situ</i> monitored growth of CdS/ZnSe(100)

Abstract

A chemical reaction scheme for room-temperature atomic-layer epitaxial growth of II–VI semiconductors is described and demonstrated. Growth is accomplished by dosing in an ultra-high-vacuum chamber, and the surface structure and composition is probed in situ by a variety of electron and ion probes.