Publication | Open Access
Effects of applied magnetic fields and hydrostatic pressure on the optical transitions in self-assembled InAs/GaAs quantum dots
112
Citations
30
References
2006
Year
Categoryquantum ElectronicsHydrostatic PressureOptical MaterialsEngineeringPhotoluminescencePhysicsGaas MatrixPhotoluminescence Peak EnergiesQuantum DeviceApplied PhysicsQuantum DotsApplied Magnetic FieldsEffective Mass ApproximationOptical TransitionsOptoelectronicsCompound SemiconductorSemiconductor Nanostructures
A theoretical study of the photoluminescence peak energies in InAs self-assembled quantum dots embedded in a GaAs matrix in the presence of magnetic fields applied perpendicular to the sample plane is performed. The effective mass approximation and a parabolic potential cylinder-shaped model for the InAs quantum dots are used to describe the effects of magnetic field and hydrostatic pressure on the correlated electron-hole transition energies. Theoretical results are found in quite good agreement with available experimental measurements for InAs/GaAs self-assembled quantum dots.
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