Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method

Status and prospects of Al2O3-based surface passivation schemes for silicon solar cells

G. Dingemans, W. M. M. Kessels · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2012 · 771 citations · Full text

Aluminium Nitride, Ultrathin Al2o3 Films, Engineering +21

Recombination activity of interstitial iron and other transition metal point defects in p- and n-type crystalline silicon

Daniel Macdonald, L.J. Geerligs · Applied Physics Letters · 2004 · 454 citations · Full text

Materials Science, Semiconductors, Interstitial Iron +14

Point defects, diffusion processes, and swirl defect formation in silicon

T. Y. Tan, U. G�sele · Applied Physics A · 1985 · 450 citations

Materials Science, Point Defects, Engineering +9

Iron contamination in silicon technology

A. A. Istratov, H. Hieslmair, E. R. Weber · Applied Physics A · 2000 · 333 citations

Corrosion, Iron Contamination, Semiconductor Device Fabrication +3

Development of high‐performance multicrystalline silicon for photovoltaic industry

Ya-Chu Yang, A. Yu, B. Hsu et al. · Progress in Photovoltaics Research and Applications · 2013 · 230 citations

Materials Science, Electrical Engineering, Engineering +14