Applied Physics Letters · 2002 · 62 citations · 17 references
Categoryquantum ElectronicsQuantum PhotonicsEngineeringStacked LayersLaser ApplicationsOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsSemiconductor LasersQuantum DotsQuaternary IngaaspCompound SemiconductorQuantum SciencePhotonicsPhysicsQuantum DeviceLaser DiodeOptoelectronic MaterialsApplied PhysicsQuantum Photonic DeviceOptoelectronics
Five stacked layers of InAs quantum dots (QDs) embedded in quaternary InGaAsP are grown on (100) InP substrate to form a laser diode. The QD ensemble has a density of 1.5×1010 cm−2 and emits light at ∼1.6 μm at 77 K. Lasing wavelength and threshold current density can be shifted by changing the cavity length of the laser diode and the latter reaches a value as low as 49 A/cm2 at 77 K for a gate size of 2000 μm×150 μm. Temperature dependence of the threshold current is observed implying the presence of thermionic emission increasing with temperature.
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Low-threshold oxide-confined 1.3-μm quantum-dot laser
Gyoungwon Park, O.B. Shchekin, Diana L. Huffaker et al. · IEEE Photonics Technology Letters · 2000 · 285 citations
Low chirp observed in directly modulated quantum dot lasers
Hirohisa Saito, Kenichi Nishi, A. Kamei et al. · IEEE Photonics Technology Letters · 2000 · 176 citations