Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

Abstract

A high-performance temperature sensor based on 4H-SiC pn diode is demonstrated. The sensor is capable of stable operation in a temperature range from 20 °C to 600 °C. The forward voltage of the pn diode has a linear dependence on temperature variation at a constant current, and recombination current dominates the current flowing in the 4H-SiC pn diode in the measured current range. At a forward current density of 0.44 mA/cm2, the device achieves a sensitivity of 3.5 mV/ °C. This type of temperature sensor can be integrated with SiC power management and control circuitry to create a sensing module that is capable of working at extremely high temperatures.