Prototyping of Field Emitter Array Using Focused Ion and Electron Beams

Abstract

Au-gated Pt field-emitter arrays (FEAs) were fabricated using focused ion and electron beams. The gate opening in Au layers was produced by physical sputtering using focused ion beams (FIBs) and subsequent wet etching of the underlying silicon dioxide layer. Deposition of a platinum pyramid-shaped emitter into the gate opening using electron beams (EBs) induced a chemical reaction producing field emission without any thermal annealing process. Pt emitters with different heights of a Au-gated field emitter array were studied. The electron emission currents are about 1 and 10 µA for the emitter tip heights of 570 and 760 nm, respectively. Consequently, the height of the emitter must be adjusted to the top surface of gate apertures for optimization of emission behavior.