Diamond chemical vapor deposition from a capacitively coupled radio frequency plasma

Abstract

Capacitively coupled radio frequency (cc-rf) plasmas offer advantages over microwave (MW) induced plasmas for the growth of large area homogeneous thin films. However, conventionally designed cc-rf sources lead, at best, to extremely poor quality material when diamond growth is attempted. The first complete diamond overlayer to be grown with cc-rf is reported here, where a novel magnetically enhanced source with ring electrodes has been used.