Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

Abstract

Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.