Optical Materials Express · 2011 · 15 citations · 28 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsChemical Vapor DepositionIii-v SemiconductorsLight SourcesLight-emitting DiodesSemiconductor HeterostructuresWide-bandgap SemiconductorsCurrent-voltage RelationsDiode Current-voltage CharacteristicsFull Width At Half MaximumGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesLight-emitting DevicesMetalorganic Chemical Vapor DepositionSeries Resistance
Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO2(100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (Vf) of 6V with a series resistance of 2.2 × 105 Ω.
28
GaN: Processing, defects, and devices
S. J. Pearton, J.C. Zolper, R. J. Shul et al. · Journal of Applied Physics · 1999 · 1.8K citations