Transient photoconductivity measurements of carrier lifetimes in an InAs∕In0.15Ga0.85As dots-in-a-well detector

Abstract

A pulsed midinfrared photoconductivity study of electron recapture in dot-in-a-well infrared photodetectors yields bias-dependent electron-capture lifetimes in the range of 3–600ns and photoconductive gain factors of ∼104–105. The dependence of the lifetimes on temperature and electric field argues for these surprisingly long values being due to electron intervalley transfer. Under normal device operating conditions, photoexcited electrons transfer efficiently out of the central GaAs Γ minimum into the high energy L and X valleys, where they couple only weakly to the Γ-like confined states in the InAs dots.