Effect of electrode type in the resistive switching behaviour of TiO₂thin films

Abstract

The influence of the electrode/active layer on the electric-field-induced resistance-switching phenomena of TiO2-based metal?oxide?metal devices (MOM) is studied. TiO2 active layers were fabricated by the reactive rf-sputtering technique and devices were made by sandwiching between several metal electrodes. Three different MOM devices were made, according with the junction type formed between the electrode and the TiO2 active layer, those where Ohmic?Ohmic, Ohmic?Schottky and Schottky?Schottky. The junction type was tested by electrical I?V measurements. It was found that MOM devices made with the Ohmic?Ohmic combination did not show any resistive switching behaviour in contrast with devices made with Ohmic?Schottky and Schottky?Schottky combinations. From a detailed analysis of the I?V curves it was found that transport characteristics are Ohmic for the low-resistance state for all the contacts combinations of the MOM devices, whereas in the high-resistance state it depends on contact combinations and can be identified as Ohmic, Schottky and Poole?Frenkel type. These conduction mechanisms in the low- and high-resistance states suggest that formation and rupture of conducting filaments through the film oxide is the mechanism responsible for the resistance switching.