Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation

Abstract

The growth of thin dielectric layers on (100) Ge samples at temperatures lower than 450 °C by photoassisted oxidation with vacuum ultraviolet radiation emitted by a Xe silent discharge lamp has been investigated. The thickness of the grown layers increased with both the oxidation time and processing temperature. Fourier transform infrared spectroscopy and x-ray photoelectron spectroscopy (XPS) indicated that the layers are mainly stoichiometric GeO2. XPS investigations also indicated the presence of a several-nanometer-thick substoichiometric oxide layer at the interface region for samples irradiated for short periods of time. Capacitance– and current–voltage measurement showed that layers thicker than 15 nm exhibited good electrical characteristics.