Electronics Letters · 1990 · 12 citations · 0 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsOptoelectronicsSemiconductor DevicesIntegrated Circuit DesignIntegrated Circuit DevicesOptical SwitchingOptoelectronic DevicesOptoelectronic MaterialsPhotonic Integrated CircuitsDevice FabricationExtinction RatioIntegrated Electro-optic DevicesIntegrated Optical SwitchesLithium NiobateOptoelectronic Properties
The first successful integration of GaAs MESFETs and lithium niobate optical switches using the epitaxial lift-off technique is reported. The interferometric switch produced an extinction ratio >30 dB at 1300 nm for an input voltage swing to the MESFET of only 240 mV. This realisation holds out interesting prospects for the development of novel, efficient and cost-effective quasi-monolithic integrated optoelectronic circuits.